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mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 description application main memory or graphic memory in computer systems preliminary some of contents are subject to change without notice. 1 1pin 10pin 11pin 40pin 41pin 84pin 85pin 94pin 95pin 124pin 125pin 168pin the mh16s72bamd is 16777216 - word x 72-bit synchronous dram module. this consist of eighteen industry standard 8m x 8 synchronous drams in tsop. the tsop on a card edge dual in-line package provides any application where high densities and large of quantities memory are required. this is a socket-type memory module ,suitable for easy interchange or addition of module. features type name 5.4ns (cl = 3) MH16S72BAMD-6 utilizes industry standard 8m x 8 synchronous drams in tsop package single 3.3v +/- 0.3v supply max.clock frequency 133mhz fully synchronous operation referenced to clock rising edge 4-bank operation controlled by ba0,ba1(bank address) /cas latency -2/3(programmable,at buffer mode) lvttl interface burst length 1/2/4/8/full page(programmable) burst type- sequential and interleave burst (programmable) random column access burst write / single write(programmable) auto precharge / all bank precharge controlled by a10 auto refresh and self refresh 4096 refresh cycles every 64ms max. frequency access time from clk [component level] 133mhz
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 2 pin no. pin name pin no. pin name pin no. pin name pin no. pin name 1 vss 43 vss 85 vss 127 vss 2 dq0 44 nc 86 dq32 128 cke0 3 dq1 45 /s2 87 dq33 129 /s3 4 dq2 46 dqmb2 88 dq34 130 dqmb6 5 dq3 47 dqmb3 89 dq35 131 dqmb7 6 vdd 48 nc 90 vdd 132 nc 7 dq4 49 vdd 91 dq36 133 vdd 8 dq5 50 nc 92 dq37 134 nc 9 dq6 51 nc 93 dq38 135 nc 10 dq7 52 cb2 94 dq39 136 cb6 11 dq8 53 cb3 95 dq40 137 cb7 12 vss 54 vss 96 vss 138 vss 13 dq9 55 dq16 97 dq41 139 dq48 14 dq10 56 dq17 98 dq42 140 dq49 15 dq11 57 dq18 99 dq43 141 dq50 16 dq12 58 dq19 100 dq44 142 dq51 17 dq13 59 vdd 101 dq45 143 vdd 18 vdd 60 dq20 102 vdd 144 dq52 19 dq14 61 nc 103 dq46 145 nc 20 dq15 62 nc 104 dq47 146 nc 21 cb0 63 cke1 105 cb4 147 nc 22 cb1 64 vss 106 cb5 148 vss 23 vss 65 dq21 107 vss 149 dq53 24 nc 66 dq22 108 nc 150 dq54 25 nc 67 dq23 109 nc 151 dq55 26 vdd 68 vss 110 vdd 152 vss 27 /we 69 dq24 111 /cas 153 dq56 28 dqmb0 70 dq25 112 dqmb4 154 dq57 29 dqmb1 71 dq26 113 dqmb5 155 dq58 30 /s0 72 dq27 114 /s1 156 dq59 31 nc 73 vdd 115 /ras 157 vdd 32 vss 74 dq28 116 vss 158 dq60 33 a0 75 dq29 117 a1 159 dq61 34 a2 76 dq30 118 a3 160 dq62 35 a4 77 dq31 119 a5 161 dq63 36 a6 78 vss 120 a7 162 vss 37 a8 79 ck2 121 a9 163 ck3 38 a10 80 nc 122 ba0 164 nc 39 ba1 81 wp 123 a11 165 sa0 40 vdd 82 sda 124 vdd 166 sa1 41 vdd 83 scl 125 ck1 167 sa2 42 ck0 84 vdd 126 nc 168 vdd nc = no connection
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 a11-0,ba0-1 3 dq4 dq5 dq6 dq7 dq0 dq1 dq2 dq3 d0 d0-17 dqm0 dqm 1 dqm 4 dqm 3 dqm 2 dqm 7 dqm 5 dqm 6 d0,9 d1,2,10 d3,12 d4,13 d5,14 d6,11,15 d7,16 d8,17 vdd vss d0-17 d0-17 sa0 sa1 sa2 serial pd scl sda a0 a1 a2 wp 47k dq28 dq29 dq30 dq31 dq24 dq25 dq26 dq27 d4 dq44 dq45 dq46 dq47 dq40 dq41 dq42 dq43 d6 dq52 dq53 dq54 dq55 dq48 dq49 dq50 dq51 d7 dq60 dq61 dq62 dq63 dq56 dq57 dq58 dq59 d8 dq36 dq37 dq38 dq39 dq32 dq33 dq34 dq35 d5 cb0 cb1 cb2 cb3 cb4 cb5 cb6 cb7 d2 dq20 dq21 dq22 dq23 dq16 dq17 dq18 dq19 d3 dq12 dq13 dq14 dq15 dq8 dq9 dq10 dq11 d1 d9 d10 d11 d12 d13 d15 d14 d17 d16 /s0 /s1 /s2 /s3 /ras d0-17 /cas d0-17 /we d0-17 cke1 d9-17 cke0 d0-8 vcc 10k ck 0 5drams ck 1 5drams ck 2 4 drams+3.3pf ck 3 4 drams+3.3pf
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 pin function input master clock:all other inputs are referenced to the rising edge of ck cke0,1 input clock enable:cke controls internal clock.when cke is low,internal clock for the following cycle is ceased. cke is also used to select auto / self refresh. after self refresh mode is started, cke e becomes asynchronous input.self refresh is maintained as long as cke is low. /s0-3 input chip select: when /s is high,any command means no operation. /ras,/cas,/w input combination of /ras,/cas,/w defines basic commands. a0-11 input a0-11 specify the row/column address in conjunction with ba.the row address is specified by a0-11.the column address is specified by a0-8.a10 is also used to indicate precharge option.when a10 is high at a read / write command, an auto precharge is performed. when a10 is high at a precharge command, both banks are precharged. ba0-1 input bank address:ba0,1 is specifies the four bank to which a command is applied.ba must be set with act ,pre ,read ,write commands dq0-63 cb0-7 input/output data in and data out are referenced to the rising edge of ck dqm0-7 input din mask/output disable:when dqmb is high in burst write.din for the current cycle is masked.when dqmb is high in burst read,dout is disabled at the next but one cycle. vdd,vss power supply power supply for the memory mounted module. ck0-3 4
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 basic functions /s chip select : l=select, h=deselect /ras command /cas command /we command cke refresh option @refresh command a10 precharge option @precharge or read/write command ck define basic commands the mh16s72bamd provides basic functions,bank(row)activate,burst read / write, bank(row)precharge,and auto / self refresh. each command is defined by control signals of /ras,/cas and /we at ck rising edge. in addition to 3 signals,/s,cke and a10 are used as chip select,refresh option,and precharge option,respectively. to know the detailed definition of commands please see the command truth table. activate(act) [/ras =l, /cas = /we =h] read(read) [/ras =h,/cas =l, /we =h] write(write) [/ras =h, /cas = /we =l] precharge(pre) [/ras =l, /cas =h,/we =l] auto-refresh(refa) [/ras =/cas =l, /we =cke =h] act command activates a row in an idle bank indicated by ba. read command starts burst read from the active bank indicated by ba.first output data appears after /cas latency. when a10 =h at this command,the bank is deactivated after the burst read(auto-precharge, reada ). write command starts burst write to the active bank indicated by ba. total data length to be written is set by burst length. when a10 =h at this command, the bank is deactivated after the burst write(auto-precharge, writea ). pre command deactivates the active bank indicated by ba. this command also terminates burst read / write operation. when a10 =h at this command, both banks are deactivated(precharge all, prea ). pefa command starts auto-refresh cycle. refresh address including bank address are generated internally. after this command, the banks are precharged automatically. 5
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 command truth table command mnemonic cke n-1 cke n /s /ras /cas /we ba0,1 a10 a0-9 deselect desel h x h x x x x x x no operation nop h x l h h h x x x row adress entry & bank activate act h x l l h h v v v single bank precharge pre h x l l h l v l x precharge all bank prea h x l l h l x h x column address entry & write write h x l h l l v l v column address entry & write with auto- precharge writea h x l h l l v h v column address entry & read read h x l h l h v l v column address entry & read with auto precharge reada h x l h l h v h v auto-refresh refa h h l l l h x x x self-refresh entry refs h l l l l h x x x self-refresh exit refsx l h h x x x x x x l h l h h h x x x burst terminate tbst h x l h h l x x x mode register set mrs h x l l l l l l v*1 h =high level, l = low level, v = valid, x = don't care, n = ck cycle number note: 1.a7-9 = 0, a0-6 = mode address 6 a11 x x v x x x x x x x l x x x x
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 current state /s /ras /cas /we address command action idle h x x x x desel nop l h h h x nop nop l h h l ba tbst illegal*2 l h l x ba,ca,a10 read/write illegal*2 l l h h ba,ra act bank active,latch ra l l h l ba,a10 pre/prea nop*4 l l l h x refa auto-refresh*5 l l l l op-code, mode-add mrs mode register set*5 row active h x x x x desel nop l h h h x nop nop l h h l ba tbst nop l h l h ba,ca,a10 read/reada begin read,latch ca, determine auto-precharge l h l l ba,ca,a10 write/ writea begin write,latch ca, determine auto-precharge l l h h ba,ra act bank active/illegal*2 l l h l ba,a10 pre/prea precharge/precharge all l l l h x refa illegal l l l l op-code, mode-add mrs illegal read h x x x x desel nop(continue burst to end) l h h h x nop nop(continue burst to end) l h h l ba tbst terminate burst l h l h ba,ca,a10 read/reada terminate burst,latch ca, begin new read,determine auto-precharge*3 l h l l ba,ca,a10 write/writea terminate burst,latch ca, begin write,determine auto- precharge*3 l l h h ba,ra act bank active/illegal*2 l l h l ba,a10 pre/prea terminate burst,precharge l l l h x refa illegal l l l l op-code, mode-add mrs illegal function truth table 7
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 function truth table (continued) current state /s /ras /cas /we address command action write h x x x x desel nop(continue burst to end) l h h h x nop nop(continue burst to end) l h h l ba tbst terminate burst l h l h ba,ca,a10 read/reada terminate burst,latch ca, begin read,determine auto- precharge*3 l h l l ba,ca,a10 write/ writea terminate burst,latch ca, begin write,determine auto- precharge*3 l l h h ba,ra act bank active/illegal*2 l l h l ba,a10 pre/prea terminate burst,precharge l l l h x refa illegal l l l l op-code, mode-add mrs illegal read with h x x x x desel nop(continue burst to end) auto l h h h x nop nop(continue burst to end) precharge l h h l ba tbst illegal l h l h ba,ca,a10 read/reada illegal l h l l ba,ca,a10 write/ writea illegal l l h h ba,ra act bank active/illegal*2 l l h l ba,a10 pre/prea illegal*2 l l l h x refa illegal l l l l op-code, mode-add mrs illegal write with h x x x x desel nop(continue burst to end) auto l h h h x nop nop(continue burst to end) precharge l h h l ba tbst illegal l h l h ba,ca,a10 read/reada illegal l h l l ba,ca,a10 write/ writea illegal l l h h ba,ra act bank active/illegal*2 l l h l ba,a10 pre/prea illegal*2 l l l h x refa illegal l l l l op-code, mode-add mrs illegal 8
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 function truth table (continued) current state /s /ras /cas /we address command action pre - h x x x x desel nop(idle after trp) charging l h h h x nop nop(idle after trp) l h h l ba tbst illegal*2 l h l x ba,ca,a10 read/write illegal*2 l l h h ba,ra act illegal*2 l l h l ba,a10 pre/prea nop*4(idle after trp) l l l h x refa illegal l l l l op-code, mode-add mrs illegal row h x x x x desel nop(row active after trcd activating l h h h x nop nop(row active after trcd l h h l ba tbst illegal*2 l h l x ba,ca,a10 read/write illegal*2 l l h h ba,ra act illegal*2 l l h l ba,a10 pre/prea illegal*2 l l l h x refa illegal l l l l op-code, mode-add mrs illegal write re- h x x x x desel nop covering l h h h x nop nop l h h l ba tbst illegal*2 l h l x ba,ca,a10 read/write illegal*2 l l h h ba,ra act illegal*2 l l h l ba,a10 pre/prea illegal*2 l l l h x refa illegal l l l l op-code, mode-add mrs illegal 9
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 function truth table (continued) current state /s /ras /cas /we address command action re- h x x x x desel nop(idle after trc) freshing l h h h x nop nop(idle after trc) l h h l ba tbst illegal l h l x ba,ca,a10 read/write illegal l l h h ba,ra act illegal l l h l ba,a10 pre/prea illegal l l l h x refa illegal l l l l op-code, mode-add mrs illegal mode h x x x x desel nop(idle after trsc) register l h h h x nop nop(idle after trsc) setting l h h l ba tbst illegal l h l x ba,ca,a10 read/write illegal l l h h ba,ra act illegal l l h l ba,a10 pre/prea illegal l l l h x refa illegal l l l l op-code, mode-add mrs illegal abbreviations: h = hige level, l = low level, x = don't care ba = bank address, ra = row address, ca = column address, nop = no operation notes: 1. all entries assume that cke was high during the preceding clock cycle and the current clock cycle. 2. illegal to bank in specified state; function may be legal in the bank indicated by ba, depending on the state of that bank. 3. must satisfy bus contention, bus turn around, write recovery requirements. 4. nop to bank precharging or in idle state.may precharge bank indicated by ba. 5. illegal if any bank is not idle. illegal = device operation and / or date-integrity are not guaranteed. 10
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 function truth table for cke current state cke n-1 cke n /s /ras /cas /we add action self - h x x x x x x invalid refresh*1 l h h x x x x exit self-refresh(idle after trc) l h l h h h x exit self-refresh(idle after trc) l h l h h l x illegal l h l h l x x illegal l h l l x x x illegal l l x x x x x nop(maintain self-refresh) power h x x x x x x invalid down l h x x x x x exit power down to idle l l x x x x x nop(maintain self-refresh) all banks h h x x x x x refer to function truth table idle*2 h l l l l h x enter self-refresh h l h x x x x enter power down h l l h h h x enter power down h l l h h l x illegal h l l h l x x illegal h l l l x x x illegal l x x x x x x refer to current state = power down any state h h x x x x x refer to function truth table other than h l x x x x x begin ck0 suspend at next cycle*3 listed above l h x x x x x exit ck0 suspend at next cycle*3 l l x x x x x maintain ck0 suspend abbreviations: h = high level, l = low level, x = don't care notes: 1. cke low to high transition will re-enable ck and other inputs asynchronously . a minimum setup time must be satisfied before any command other than exit. 2. power-down and self-refresh can be entered only form the all banks idle state. 3. must be legal command. 11
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 power on sequence before starting normal operation, the following power on sequence is necessary to prevent a sdram from damaged or malfunctioning. 1. clock will be applied at power up along with power. attempt to maintain cke high, dqmb high and nop condition at the inputs along with power. 2. maintain stable power, stable cock, and nop input conditions for a minimum of 200s. 3. issue precharge commands for all banks. (pre or prea) 4. after all banks become idle state (after trp), issue 8 or more auto-refresh commands. 5. issue a mode register set command to initialize the mode register. after these sequence, the sdram is idle state and ready for normal operation. mode register burst length, burst type and /cas latency can be programmed by setting the mode register(mrs). the mode register stores these date until the next mrs command, which may be issue when both banks are in idle state. after trsc from a mrs command, the sdram is ready for new command. 12 r:reserved for future use /s /ras /cas /we ba0,1 a11-0 ck v bl 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 burst length bt= 0 bt= 1 1 2 4 8 r r r fp 1 2 4 8 r r r r 0 1 burst type sequential interleaved a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 ba1 ba0 0 0 wm 0 0 ltmode bt bl 0 0 cl 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 latency mode /cas latency 2 3 r r r r r r 0 1 write mode burst single bit fp: full page
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 command address ck read y q0 q1 q2 q3 write y d0 d1 d2 d3 /cas latency burst length burst length dq burst type cl= 3 bl= 4 a2 a1 a0 initial address bl sequential interleaved column addressing 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 - 0 0 - 0 1 - 1 0 - 1 1 - - 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 1 2 3 4 5 6 7 0 1 0 3 2 5 4 7 6 2 3 4 5 6 7 0 1 2 3 0 1 6 7 4 5 3 4 5 6 7 0 1 2 3 2 1 0 7 6 5 4 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3 5 6 7 0 1 2 3 4 5 4 7 6 1 0 3 2 6 7 0 1 2 3 4 5 6 7 4 5 2 3 0 1 7 0 1 2 0 1 2 3 1 2 3 0 2 3 0 1 3 0 0 1 7 6 5 4 0 1 2 3 1 0 3 2 2 3 0 1 3 2 0 1 - - 1 1 2 1 0 3 4 5 6 3 2 1 0 1 0 1 0 8 4 2 13
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 absolute maximum ratings symbol parameter condition ratings unit vdd vi vo io pd topr tstg supply voltage input voltage output voltage output current power dissipation operating temperature storage temperature with respect to vss with respect to vss with respect to vss ta=25 c -0.5 ~ 4.6 -0.5 ~ 4.6 -0.5 ~ 4.6 50 18 0 ~ 70 -45 ~ 100 v v v ma w c c recommended operating condition (ta=0 ~ 70c, unless otherwise noted) symbol vdd vss vih*1 vil*2 parameter supply voltage high-level input voltage all inputs supply voltage low-level input voltage all inputs limits unit min. typ. max. 3.0 0 2.0 -0.3 3.3 0 3.6 0 vdd+0.3 0.8 v v v v capacitance (ta=0 ~ 70c, vdd = 3.3 +/- 0.3v, vss = 0v, unless otherwise noted) symbol ci(a) ci(c) ci(k) ci/o parameter input capacitance, address pin input capacitance, control pin input capacitance, ck0 pin input capacitance, i/o pin test condition limits(max.) unit 1mhz 1.4v bias 200mv swing 83.4 83.4 32.5 23 pf pf pf pf 14 notes) 1. vih(max)=vdd+2.0v ac for pulse width less than 3ns acceptable. 2. vil(min)= -2.0v for pulse width less than 3ns acceptable.
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 15 average supply current from vdd (ta=0 ~70c , vdd = 3.3 0.3v, vss = 0v, unless otherwise noted) ac operating conditions and characteristics (ta=0 ~ 70c , vdd = 3.3 0.3v, vss = 0v, unless otherwise noted) symbol parameter test condition limits unit min. max. voh(dc) high-level output voltage(dc) ioh=-2ma 2.4 v vol(dc) low-level output voltage(dc) iol=2ma 0.4 v ioz off-stare output current q floating vo=0 ~ vdd ua ii input current vih=0 ~ vdd+0.3v -180 18 0 ua test condition limits (max) unit trc=min.tclk=min, bl=1, cl=3, iol=0ma 1575 ma 45 0 ma 36 0 ma 36 ma tclk=min, bl=4, cl=3,iol=0ma all banks active(discerte) 1800 ma trfc=min, tclk=min 2700 ma cke <0.2v 18 ma note) 1.icc(max) is specified at the output open condition. 2.input single are changed one time during 30ns. symbol icc1 icc4 icc5 icc6 parameter operating current single bank operation (discrete) cke=vilmax,tclk=15ns cke=clk=vilmax (fixed) icc2p icc2ps precharge stanby current in power-down mode burst current auto-refresh current self-refresh current ma cke=vihmin,tclk=15ns icc2ns icc2n clk=vilmax, cke=vihmin (fixed) precharge stanby current in non power-down mode 990 ma 720 ma icc3ns cke= /cs=vihmin,tclk=15ns icc3n cke= /cs=vihmin,clk=vilmax (fixed) active stanby current in non power down mode note *1 *1,2 *1 *1,2 *1 *1,2 *1 *1 *1 *1 -20 2 0 36 ma 18 ma icc3ps cke=vilmax,tclk=15ns icc3p cke= clk=vilmax (fixed) active stanby current in power down mode *1,2 *1 18
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 ac timing requirements (ta=0 ~ 70c, vdd = 3.3 +/- 0.3v, vss = 0v, unless otherwise noted) input pulse levels: 0.8v to 2.0v input timing measurement level: 1.4v ck signal 1.4v 1.4v any ac timing is referenced to the input signal crossing through 1.4v. 16 limits symbol parameter unit tclk ck cycle time ns tch ck high pulse width ns tcl ck low pulse width ns tt transition time of ck ns tis input setup time(all inputs) ns tih input hold time(all inputs) ns trc row cycle time ns trcd row to column delay ns tras row active time ns trp row precharge time ns twr write recovery time ns trrd act to act deley time ns trsc mode register set cycle time ns tref refresh interval time ms cl=3 tsrx self refresh exit time ns min. max. 2.5 7.5 2.5 1 10 1.5 0.8 67.5 22.5 45 100k 22.5 15 15 15 64 7.5 cl=2 - ns trfc row refresh cycle time ns 80 tpde power down exit time ns 7.5
mitsubishi electric 1,207,959,552-bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 switching characteristics (ta=0 ~ 70c, vdd = 3.3 +/- 0.3v, vss = 0v, unless otherwise noted) unit ns ns ns limits symbol parameter tac access time from ck cl=3 ns toh output hold time from ck tolz delay time, output low impedance from ck tohz delay time, output high impedance from ck 17 min. max. 2.7 0 2.7 5.4 cl=2 - 5.4 no te *1 note ) 1.if clock rising time is longer than 1ns, (tr /2-0.5ns) should be added to the parameter. 1.4v 1.4v dq ck tac toh tohz output load condition v out ext.cl=50pf dq ck output timing measurement reference point 1.4v 1.4v
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 burst write (single bank) bl=4 18 /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 0 d0 d0 d0 d0 x x x 0 y 0 d0 d0 d0 d0 act#0 write#0 pre#0 act#0 write#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd twr trp trc trcd clk italic parameter indicates minimum case tras a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 burst write (multi bank) bl=4 19 /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 1 d0 d0 d0 d0 x x 0 y 0 d0 d0 d0 d0 act#0 write#0 pre#0 act#0 write#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd tras twr trp trc trcd d1 d1 d1 d1 x x x 1 trrd y twr 0 x 1 x x x 2 trrd act#1 write#1 pre#1 act#2 clk italic parameter indicates minimum case a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 burst read (single bank) bl=4,cl=3 20 /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 0 q0 q0 q0 q0 x x x 0 y 0 q0 q0 act#0 read#0 pre#0 act#0 read#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd tras trp trc trcd cl=3 read to pre 3bl allows full data out dqm read latency =2 clk italic parameter indicates minimum case a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 bl=4,cl=3 burst read (multi bank) 21 /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 0 q0 q0 q0 q0 x x x 0 y 0 q0 act#0 read#0 pre#0 act#0 read#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd tras trp trc trcd cl=3 dqm read latency =2 trrd x x x 1 act#1 y 1 trrd q1 q1 q1 q1 x x x 2 1 cl=3 read#1 pre#1 act#2 clk italic parameter indicates minimum case a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 22 burst write (multi bank) with auto-precharge bl=4 /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 1 d0 d0 d0 d0 x x 0 y 0 d0 d0 d0 d0 act#0 write#0 with autoprecharge act#0 write#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd trc trcd d1 d1 d1 d1 x x x 1 trrd y x 1 x x x trrd act#1 write#1 with autoprecharge bl-1+ twr + trp y 1 d1 trcd act#1 write#1 clk bl-1+ twr + trp italic parameter indicates minimum case a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 23 /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 q0 q0 q0 q0 x x x 0 y 0 q0 act#0 read#0 with auto-precharge act#0 read#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd trc trcd cl=3 dqm read latency =2 trrd x x x 1 act#1 y 1 trrd q1 q1 q1 q1 cl=3 read#1 with auto-precharge act#1 bl+ trp bl+ trp x x x 1 y 1 clk q0 cl=3 trcd italic parameter indicates minimum case burst read (multi bank) with auto-precharge bl=4,cl=3 a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 24 /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 0 d0 d0 d0 d0 act#0 write#0 write#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd d1 d1 d1 d1 y y 0 write#1 clk x x x 1 trrd 1 y d0 d0 d0 d0 d0 d0 d0 act#1 write#0 italic parameter indicates minimum case page mode burst write (multi bank) bl=4 a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 25 /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 0 q0 q0 q0 act#0 read#0 read#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd q1 q1 q1 q1 y y 0 read#1 clk x x x 1 trrd 1 y q0 q0 q0 q0 act#1 read#0 q0 cl=3 cl=3 cl=3 dqm read latency=2 italic parameter indicates minimum case page mode burst read (multi bank) bl=4,cl=3 a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 26 /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 d0 d0 d0 d0 act#0 write#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd q0 write#1 clk x x x 1 trrd 1 y d0 d0 d1 d1 q0 q0 q0 act#1 write#0 y y 0 0 0 y tccd cl=3 write#0 read#0 burst write can be interrupted by write or read of any active bank. italic parameter indicates minimum case write interrupted by write / read bl=4 a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 2 7 /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 0 q0 q0 q0 act#0 read#0 write#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd q0 d0 d0 y y 0 read#1 clk x x x 1 trrd 0 y q0 q0 q1 q1 act#1 read#0 q0 dqm read latency=2 0 y 1 y burst read can be interrupted by read or write of any active bank. read#0 read#0 blank to prevent bus contention italic parameter indicates minimum case read interrupted by read / write bl=4,cl=3 a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 d0 d0 d0 d0 act#0 write#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd write#1 clk x x x 1 trrd 1 d1 d1 d1 d1 d1 act#1 y 1 1 y burst write is not interrupted by precharge of the other bank. 0 x x x 1 pre#1 pre#0 act#1 write#1 burst write is interrupted by precharge of the same bank. italic parameter indicates minimum case write interrupted by precharge bl=4 a0-9 a10 dqm a11 28
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 q0 q0 q0 act#0 read#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd y 1 pre#1 clk x x x 1 trrd q1 q1 act#1 pre#0 q0 dqm read latency=2 1 y 1 burst read is not interrupted by precharge of the other bank. 0 x x x 1 trcd trp read#1 act#1 read#1 burst read is interrupted by precharge of the same bank. italic parameter indicates minimum case read interrupted by precharge bl=4,cl=3 a0-9 a10 dqm a11 29
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 mode register setting /cs /ras /cas /we cke ba0,1 dq auto-ref (last of 8 cycles) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 y 0 clk trc d0 mode register setting m 0 x x x 0 trcd trsc act#0 write#0 d0 d0 d0 italic parameter indicates minimum case a0-9 a10 dqm a11 30
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 auto-refresh /cs /ras /cas /we cke ba0,1 dq auto-refresh 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 clk trc before auto-refresh, all banks must be idle state. y 0 d0 x x x 0 trcd act#0 write#0 d0 d0 d0 after trc from auto-refresh, all banks are idle state. italic parameter indicates minimum case a0-9 a10 dqm a11 31 bl=4
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 32 self-refresh /cs /ras /cas /we cke ba0,1 dq self-refresh entry 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 clk before self-refresh entry, all banks must be idle state. x x x 0 self-refresh exit act#0 after trc from self-refresh exit, all banks are idle state. trc+1 tsrx clk can be stopped cke must be low to maintain self-refresh italic parameter indicates minimum case a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 33 dqm write mask /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 0 d0 d0 d0 d0 y 0 d0 d0 d0 act#0 write#0 write#0 write#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd clk y masked masked italic parameter indicates minimum case bl=4 a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 34 dqm read mask /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 0 q0 q0 q0 q0 y 0 q0 q0 q0 act#0 read#0 read#0 read#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd clk y masked masked dqm read latency=2 italic parameter indicates minimum case bl=4, cl=3 a0-9 a10 dqm a11
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 power down /cs /ras /cas /we cke ba0,1 dq 0 precharge all act#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 clk x x x standby power down active power down cke latency=1 italic parameter indicates minimum case a0-9 a10 dqm a11 35
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 clk suspend /cs /ras /cas /we cke ba0,1 dq x x x 0 y 0 0 q0 q0 q0 q0 act#0 write#0 read#0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 trcd clk y d0 d0 d0 d0 clk suspended clk suspended cke latency=1 cke latency=1 italic parameter indicates minimum case bl=4,cl=3 a0-9 a10 dqm a11 36
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 serial presence detect table i byte function described spd enrty data spd data(hex) 0 # of serial pd bytes written during production 128 80 1 total # of bytes in spd device 256 bytes 08 2 fundamental memory type sdram 04 3 # row addresses on this assembly a0-a11 0c 4 # column addresses on this assembly a0-a8 09 5 # module banks on this assembly 2 bank 02 6 data width of this assembly... x72 48 7 ... data width continuation 0 00 8 voltage interface standard of this assembly lvttl 01 9 sdram cycletime at max. supported cas latency (cl). 75 cycle time for cl=3 10 sdram access from clock 5.4 ns 54 tac for cl=3 11 dimm configuration type (non-parity,parity,ecc) ecc 02 12 refresh rate/type self refresh(15.625us) 80 13 sdram width,primary dram x8 08 14 error checking sdram data width x8 08 15 minimum clock delay,back to back random column addresses 1 01 16 burst lengths supported 1/2/4/8/full page 8f 17 # banks on each sdram device 4bank 04 18 cas# latency 3 04 19 cs# latency 0 01 20 write latency 0 01 21 sdram module attributes un buffered 00 22 sdram device attributes:general precharge all,auto precharge write1/read burst 0e 23 sdram cycle time(2nd highest cas latency) cycle time for cl=2 24 sdram access form clock(2nd highest cas latency) 0 0 tac for cl=2 25 sdram cycle time(3rd highest cas latency) n/a 00 n/a 00 26 sdram access form clock(3rd highest cas latency) 27 precharge to active minimum 23ns(22.5ns) 17 28 row active to row active min. 15 ns 0f 7.5 ns 0 0 29 ras to cas delay min 30 active to precharge min 45 ns 2d 37 n/a n/a 23ns(22.5ns) 17
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 serial presence detect table ii 31 density of each bank on module 64 mbyte 1 0 36-61 superset information (may be used in future) option 00 62 spd revision 63 checksum for bytes 0-62 a5 64-71 manufactures jedec id code per jep-108e mitsubishi 1cffffffffffffff 72 manufacturing location miyoshi,japan 01 tajima,japan 02 nc,usa 03 germany 04 73-90 manufactures part number 91-92 revision code pcb revision rrrr 93-94 manufacturing date year/week code yyww 95-98 assembly serial number serial number ssssssss 99-125 manufacture specific data option 00 126 intetl specification frequency 64 127 intel specification cas# latency support 128+ unused storage locations open 00 32 command and address signal input setup time 1.5 ns 15 33 command and address signal input hold time 0.8 ns 08 34 data signal input setup time 1.5 ns 35 data signal input hold time 0.8 ns jedec2 02 38 MH16S72BAMD-6 4d48313653373242414d442d362020202020 f d cl=3,ap,ck0-3 15 08
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 133.35 3.9 max 8.89 11.43 3 24.495 6.35 36.83 127.35 42.18 6.35 54.61 1.27 34.925 3 39 1.27
mitsubishi electric 1,207,959,552 -bit ( 16,777,216-word by 72-bit ) synchronous dynamic ram MH16S72BAMD-6 mitsubishi lsis 10 /may. /1999 mit-ds-0314-0.0 keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable,but there is always the possibility that trouble may occur with them. trouble with semiconductors consideration to safety when making your circuit designs,with appropriate measures such as (i) placement of substitutive,auxiliary circuits,(ii) use of non- flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1.these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer's application;they do not convey any license under any intellectual property rights,or any other rights,belonging to mitsubishi electric corporation or a third party. 2.mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third- party's rights,originating in the use of any product data,diagrams,charts or ci rcuit application examples contained in these materials. 3.all information contained in these materials,including product data, diagrams and charts,represent information on products at the time of publication of these materials,and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized mitsubish semiconductor product distributor for the latest product information before purchasing a product listed herein. 4.mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for special applications,such as apparatus or systems for transportation, vehicular,medical,aerospace,nuclear,or undersea repeater use. 5.the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in whole or in part these materials. 6.if these products or technologies are subject the japanese export control restrictions,they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 7.please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein. 40

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